Opticla characterization of ion implantation in Si and Si/SiO_2 structures: spectrollipsometric (SE) and second harmonic generation (SHG) results

摘要

This paper presents results concerning the ability of second harmonic generation (SHG) adn spectroellipsometry (SE) to probe ion implantation effects in Si and Si/SiO_2 strucutes. Bf_2 and As implanted Si/SiO_2 (0.1 μ) samples are analysed by SHG; both dose and ion type effects are identified and the SHG signals are correlated with simulations of ion and vacancies depth distriutions. Boron implanted Si samples were investigted by SE, showing how imporatant information aobut the re-growth ofthe Si netork after post-implantation annealing can be obtained. The multilayer model approach which was used for the data analysis can give also details referring to the thickness of the oxide, on low resistivity substrates. These results are also supported by computer simulations.