Non-destructive estimation method on cosmic ray ruggedness of power semiconductors using repetitive monitoring technique

摘要

Single Event Burnout (SEB) due to terrestrial neutrons is considered to be one of the most catastrophic failure modes of power semiconductor devices. Since SEB is a random failure event, it is necessary to conduct long-term destructive tests or tests with special facilities, such as a neutron or heavy ion radiation accelerator. In this paper, we propose a non-destructive SEB failure rate estimation method using a repetitive monitoring technique, based on a parallel testing circuit. The effect of the number of paralleled devices, which is one of the thresholds between destructive and non-destructive tests, is qualitatively investigated by using a device simulation tool. Non-destructive large and small current spikes are observed without any accelerator by modifying the test circuit and adjusting the number of paralleled devices. The observation frequency of these spikes is compared with the destructive failure rate of the devices, and it is assumed that these spikes originate from single event effects. It also indicate that small spikes might also contribute to the destruction of devices.