首页>
外国专利>
TECHNIQUE FOR NON-DESTRUCTIVE METAL DELAMINATION MONITORING IN SEMICONDUCTOR DEVICES
TECHNIQUE FOR NON-DESTRUCTIVE METAL DELAMINATION MONITORING IN SEMICONDUCTOR DEVICES
展开▼
机译:半导体器件中非破坏性金属分层监测技术
展开▼
页面导航
摘要
著录项
相似文献
摘要
By providing large area metal plates in combination with respective peripheral areas of increased adhesion characteristics, delamination events may be effectively monitored substantially without negatively affecting the overall performance of the semiconductor device during processing and operation. In some illustrative embodiments, dummy vias may be provided at the periphery of a large area metal plate, thereby allowing delamination in the central area while substantially avoiding a complete delamination of the metal plate. Consequently, valuable information with respect to mechanical characteristics of the metallization layer as well as process flow parameters may be efficiently monitored.
展开▼