Non-destructive metal delamination monitoring method e.g. for semiconductor devices, involves forming metal-comprising test plate in metallization layer stack of semiconductor device formed above substrate

摘要

The method involves forming a metal-comprising test plate in a metallization layer stack of a semiconductor device formed above a substrate. The metal-comprising test plate has a delamination test region and an adhesion region having an enhanced adhesion within the metallization layer stack compared to the delamination test region. A degree of delamination in the delamination test region is estimated. An independent claim is included for a semiconductor structure.