Surface layer effective density-of-states (SLEDOS) and its applications in MOS devices modeling

摘要

The concept of surface potential effective density-of-states (SLEDOS) is presented in modeling the quantified inversion layer. Carrier distribution models both in semi-classical and quantum mechanical cases are developed based on SLEDOS. Threshold voltage shift model due to QMEs, a new iteration method to calculate the inversion carrier sheet density and surface potential, as well as a gate capacitance model are built based on the concept of SLEDOS. It is demonstrated that the concept of SLEDOS reveals the physical nature of inversion layer quantization and provides a feasible method to characterize MOS inversion layer.