Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer

摘要

Phosphorus diffusion into strained SiGe layers was studied by different methods. Doping profiles and carrier concentration profiles N(x), depth of pn junction, Ge content in SiGe and thickness of epitaxial layer were measured and simulated. Several experimental methods such as secondary ion mass spectroscopy, spreading resistance method, Raman spectroscopy- and process simulator ISE TCAD have been used. The results obtained by different methods and at different places of work have been compared and analysed.