Combined IV and CV Analysis of Laser Annealed Carbon and Boron Implanted SiGe Epitaxial Layers

摘要

SiGe epitaxial layers receiving sub-melt laser annealing after Carbon and Boron co-implantations are investigated. Their electrical properties have been evaluated in the reverse bias region of the IV and CV characteristics of SiGe/Si diode structures. Large dc leakage currents and frequency-dependent capacitance dispersions are observed. They are indicating the presence of electrically active defects in the studied devices. Combined IV and CV analysis suggests that the defectivity of the B-induced end-of-range defects can be enhanced by the laser treatment. This laser-driven enhancement can be suppressed by the C co-implantations. Experimental results also indicate that this C treatment is strongly affected by the laser annealing conditions.