Finite element modeling the solid phase epitaxial growth of boron-doped silicon layers.

摘要

This research is devoted to studying the role of stress on the Solid Phase Epitaxy (SPE) of doped-Si layers (an alternative to Si-Ge systems) using numerical simulations. Doped-silicon based (e.g., silicon-germanium (Si-Ge) based) semiconductors is modeled for this work due to the difficulties of simulation of Si-Ge. The simulation employs anisotropic Finite Element Analysis (FEA) for the simulation model as well as Marker Particle Method (MPM) to track the evaluating of a-c interface. Also, least square regression is used to modify the a-c interface from MPM for reflection of symmetric model. The primary objective is to identify sources that may contribute to the interfacial roughening, and thereby to determine ways that would make the SPE technique applicable to Si-Ge thin films. When anisotropic FEA and least square regression are used, these methods improve the simulation data to match with experimental data. The research outcomes therefore suggest that the model revision is in the right direction to make this simulation technique applicable to the SPE in B-doped Si systems.