首页>
外国专利>
Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact
Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact
展开▼
机译:用于高级源极/漏极接触的磷掺杂硅和硼掺杂硅锗(Ge)的无掩模外延生长
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method is presented for forming a transistor having reduced parasitic contact resistance. The method includes forming a first device over a semiconductor structure, forming a second device adjacent the first device, forming an ILD over the first and second devices, and forming recesses within the ILD to expose the source/drain regions of the first device and the source/drain regions of the second device. The method further includes forming a first dielectric layer over the ILD and the top surfaces of the source/drain regions of the first and second devices, a chemical interaction between the first dielectric layer and the source/drain regions of the second device resulting in second dielectric layers formed over the source/drain regions of the second device, and forming an epitaxial layer over the source/drain regions of the first device after removing remaining portions of the first dielectric layer.
展开▼