Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures

摘要

In this work, we measure the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the Au/InP(100) and Au/InSb/InP(100) Schottky type diodes. The InP(n) substrate is restructured by some monolayers of the InSb thin film. We then propose a study of the electrical quality of the elaborated components after the Au/InP interface creation; first without annealing and then after annealing by heating at 500 deg C temperatures. Analysis of the measured I(V) characteristics for the Au/InP and Au/InSb/InP samples allows the determination of the electrical parameter variations. The saturation current I_s, the serial resistance R_s, the mean ideality factor n and also the barrier height ф_Bn, are respectively equal to 2.10 x 10~-4 A, 19Ω, 1.8 and 0.401 eV for the Au/InP sample and equal to 1.34 x 10~-7 A, 175 Ω, 1.78 and 0.592 eV for the Au/heated InSb/InP. Another good result is that the analysis and simulation of the I(V) and the C(V) characteristics allows us to determine the very important mean interfacial state density N_ss(mean), and is obtained to be equal 4.23 x 10~12 eV~-1 cm~-2 for the Au/InP sample and equal to 4.42 x 10~12 eV~-1 cm~-2 for the Au/heated InSb/InP. This work thus permits the evolution study of these electrical parameters related to the restructuration conditions.