Resist Removal Process in Dual Damascene Structure Integrating Cu and silk for 0.18μm Technology.

摘要

As technology moves down to 0.18 μm, the introduction of new materials such as copper and low-k dielectrics requires new process strategies. This paper addresses some issues encountered during post etch cleaning and resist removal for the integration of copper interconnects and SiLK. A new safe and reliable dry/wet combination is suggested for resist removal on organic low-k dielectric/copper structures.