Formation of narrow grooves on thin metal layer by focused ion beam etching

摘要

Formation of narrow grooves in a thin metal layer was investigated which is a key in the proposed in situ focused ion beam (FIB) process to fabricate novel structures for observation of such phenomena as single electron tunneling and giant magnetoresistance. Using a finely focused beam, narrower line patterns with narrower spacings were delineated on a Geitrocellulose double layer resist. It is shown that the line spacing an length were limited mainly by the process of Peeling off of the Ge layer during the FIB etching.