Selective removal of atoms as a new method for fabrication of nanoscale patterned media

摘要

The method of 'selective removal of atoms' is proposed for purposeful efficient modification of a solid atomic composition under exposure to an accelerated ion beam of a certain energy. Such modification can dramatically change the physical properties of a thin material layer. This method could be used to create directly the needed spatial modulation of atomic composition and physical properties of a material, i.e. to produce a nanoscale patterned media for various applications (magnetic storage media, GaAs Schottky diodes and field effect transistors, optical structures, nanoscale biochips, and many others).