Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer

摘要

The experimental data for Gd_2O_3, as a typical example of rare earth oxide films, clearly indicate that combination of high resolution RBS and high resolution XPS studies is powerful for the determination of composition and chemical structures of high-κ dielectric films. Conduction and valence band discontinuities at rare earth oxide/Si(100) interfaces were also determined by measuring the O 1s photoelectron energy loss and valence band spectra.