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首页> 外文期刊>Applied Surface Science >Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer
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Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

机译:La2O3 / Si(100)界面过渡层的组成,化学结构和电子能带结构的原子尺度深度分布

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摘要

The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La2O3/Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra. (C) 2004 Elsevier B.V. All rights reserved.
机译:结合角度分辨光电子能谱和高分辨率卢瑟福背散射研究确定了氧化镧薄膜的组成和化学结构。 La2O3 / Si(1 0 0)界面处的导带和价带不连续性也通过测量O 1s光电子能量损失和价带谱来确定。 (C)2004 Elsevier B.V.保留所有权利。

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