Microstructure of eutectic 80Au/20Sn solder joint in laser diode package

摘要

Laser diodes (LD) are usually bonded onto heat sinks for the purposes of heat dissipation, mechanical support and electrical interconnect. In this study, energy dispersive X-ray analysis (EDX) and electron backscatter diffraction (EBSD) are employed to investigate the microstructure evolution of 80Au/20Sn solder joint in LD package. During reflow, Pt-Sn and (Au, Ni)Sn IMCs were formed at the respective LD/solder and solder/heatsink interfaces, while δ, β and ζ' phases of Au/Sn intermetallics were found in the solder joint. The Au-rich β and ζ' phases in the solder joint limit the growth of interfacial IMCs. Chip shear testing showed that the failure occurred within the LD, with partial brittle fracture at the GaAs substrate and partial interfacial delamination at the GaAs/SiN interface. The strong solder bond can be attributed to the high mechanical strength of 80Au/20Sn solder, which provides improved stability for high temperature applications.