机译:高κ电介质与III-V材料集成的挑战(特邀论文)
Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;
Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;
Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;
Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;
Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;
III-V Semiconductors; surface passivation; atomic layer deposition; field effect transistors;
机译:具有高κ控制电介质的电荷陷阱存储器的可靠性(特邀论文)
机译:用于下一代存储设备的高κ电介质(特邀论文)
机译:混合阴离子GaAs
机译:III-V材料在高级CMOS逻辑中的集成挑战
机译:III-V半导体表面上高κ电介质原子层沉积过程中的表面反应
机译:生物材料的介电谱研究及其在纸上的应用
机译:纳米多孔低介电常数材料的集成挑战