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Challenges of integration of high-κ dielectric with III-V materials (Invited Paper)

机译:高κ电介质与III-V材料集成的挑战(特邀论文)

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摘要

This paper gives a brief overview of some of the challenges and approaches of integration of high dielectric constant (high-κ) dielectrics with compound semiconductor materials for future high performance low power logic applications. Reviewed themes include interface passivation layer, atomic layer deposition self-cleaning effects and characterization of dielectric/III-V interfaces.
机译:本文简要概述了将高介电常数(high-κ)电介质与化合物半导体材料集成在一起以应对未来高性能低功耗逻辑应用的一些挑战和方法。审查的主题包括界面钝化层,原子层沉积的自清洁效应和介电/ III-V界面的表征。

著录项

  • 来源
    《Microelectronic Engineering》 |2009年第9期|1540-1543|共4页
  • 作者单位

    Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;

    Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;

    Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;

    Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;

    Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA 95052, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    III-V Semiconductors; surface passivation; atomic layer deposition; field effect transistors;

    机译:III-V Semiconductors;表面钝化;原子层沉积;场效应晶体管;

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