Electrical properties of TiO_2-based MIM capacitors deposited by TiCl_4 and TOP based atomic layer deposition processes

摘要

In this work, we have prepared metal-insulator-metal capacitors for dynamic random access memory capacitor application using atomic layer deposition of TiO_2 high-K dielectric and RuO_2 bottom electrode. We compare TiO_2 layers grown using TiCl_4 precursor or Ti-tetra-isopropOxide precursor, and Al-doped TiO_2 layers grown using Ti-tetra-isopropOxide precursor. The capacitors were analyzed in the terms of capacitance - voltage and current - voltage measurements and transmission electron microscopy imaging.