Direct epitaxial growth of InP based heterostructures on SrTiO_3/Si(0 0 1) crystalline templates

摘要

A study of the structural and optical properties of an InAsP/InP quantum well heterostructure grown on a crystalline SrTiO_3 (STO)/Si(0 0 1) template is presented. The mismatch between InP and STO is fully accommodated by an array of geometric dislocations confined at the heterointerface. As a consequence, InP takes its bulk lattice parameter as soon as growth begins, and does not contain threading dislocations related to plastic relaxation. It contains twins related to the initially three-dimensional growth. Despite these twins, photoluminescence from the quantum well is detected at room temperature, showing that STO/Si(0 0 1) templates have an interesting potential for the monolithic integration of III-V semiconductors on silicon.