Low-Temperature Epitaxial Growth of Si and Ge and Fabrication of Isotopic Heterostructures by Direct Ion Beam Deposition (IBD)

摘要

Direct ion beam deposition (IBD) is utilized to deposit isotopic thin films and heterostructures and to achieve high-quality epitaxial growth of sup 74 Ge on Ge(100) and sup 30 Si on Si(100) at temperatures as low as 400 deg C. Anomalous damage is observed during IBD at 400 and 600 deg C that results in a band of buried loops at depths 50 times normal and a defect-free region near the original surface. An unexplained doping effect is reported for epitaxial growth of Si on Si at 20 to 40 eV, 400 deg C where high-quality epitaxy occurs on n-type Si but amorphous films form on p-type. (ERA citation 11:051376)