Experimental study and modeling of double-surrounding-gate and cylindrical silicon-on-nothing MOSFETs

摘要

An experimental study and modeling of double-surrounding-gate (DSG) and silicon-on-nothing surrounding-gate (SONSG) MOSFETs are presented. The manufacturing challenges of advanced multiple-gate MOSFETs are discussed; and DSG and SONSG devices are proposed as potential solutions to overcome these fabrication challenges. The analytic general solution to cylindrical (nonlinear) Poisson's equation is applied to analyze DSG and SONSG device performance. Numerical issues of solving two coupled implicit transcendental equations to obtain two integration constants are addressed. It is found that under the same boundary conditions, concentration of the induced charge in a DSG MOSFET is comparable to a conventional double-gate MOSFET.