Photovoltaic properties of n-type SnS contact on the unpolished p-type Si surfaces with and without sulfide treatment

摘要

The fabrication and detailed electrical properties of heterojunction diodes based on n-type SnS (n-SnS) and p-type Si (p-Si) were reported. The effect of sulfide treatment of p-Si on the power conversion efficiency (PCE) of the n-SnS/unpolished p-Si solar cell was investigated. The n-SnS/unpolished p-Si device without sulfide treatment showed a rectifying behavior with an ideality factor (η) of 1.6 and high series resistance (R_s). However, the n-SnS/unpolished p-Si diode with sulfide treatment for 40 s showed a good rectifying behavior with η of 1.4 and low R_s. Therefore, the enhanced PCE can be interpreted by the device rectifying performance and interface passivation. In addition, note that a suitable sulfide treatment time is an important issue for producing high-efficiency solar cells.