Optoelectronic semiconductor chip i.e. thin-film LED, has n-type contact layer comprising transparent conductive oxide layer, where p-type and n-type contact layers are in electrical contact with p-side and n-side of body, respectively

摘要

The chip (10) has an active layer (1a) arranged between a p-side (1c) and an n-side (1b) of a semiconductor body (1) for radiation generation. A p-type contact layer (21a) and an n-type contact layer (2) are in electrical contact with the p-side and the n-side of the body, respectively. The n-type contact layer comprises a transparent conductive oxide (TCO) layer. An electrically insulating layer (3) is arranged between the p-type and n-type contact layers. A silver layer of the n-type contact layer is guided through a perforation (22).