Low resistivity electrical contacting of porous n-type GaN layers due to reduced workfunction intermetallic seed layers

摘要

Porous GaN crystals have been grown on Pt- and Au- coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas in a CVD system, intermetallic metal-Ga alloys formed at the interface allow the seeding and growth of porous GaN by vapor-solid-solid processes. Current-voltage and capacitance-voltage measurements confirm that the intermetallic seed layers result in near-ohmic contacts to porous n-GaN with low contact resistivities.