Conformal isolation of high-aspect-ratio TSVs using a low-kappa dielectric deposited by filament-assisted CVD

摘要

In this study, SiOCH thin films were deposited by filament assisted chemical vapor deposition using methyltriethoxysilane. It is shown that annealing the films at 400 degrees C (with or without UV-assist) is required to meet specifications in terms of dielectric properties (low-kappa values and good insulating properties). This work highlights FACVD as a promising technique to allow the deposition of conformal dielectric thin films within High-Aspect-Ratio TSVs. Step coverage higher than 70% were obtained within 10 * 80 mu m TSVs. Then, FACVD deposited SiOCH films can be considered as a promising candidate for use within TSV technologies. (C) 2016 Elsevier B.V. All rights reserved.