首页> 外文期刊>Journal of Microelectromechanical Systems >High-Aspect Ratio Vertical Comb-Drive Actuator With Small Self-Aligned Finger Gaps
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High-Aspect Ratio Vertical Comb-Drive Actuator With Small Self-Aligned Finger Gaps

机译:高纵横比的垂直梳状驱动器执行器,具有小的自对准手指间隙

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摘要

A vertical comb-drive actuator with thin, high-aspect ratio comb fingers and small self-aligned gaps is presented. Key to the actuator design is the self-aligned, offset comb-drive fingers, which are fabricated with small gaps (≤2 μm) using a single lithography step. The offset comb fingers are fabricated using two thick conducting layers separated by a thin dielectric layer. The lower fingers are formed from the device layer (20 μm) of an sil- icon-on-insulator (SOI) substrate, while an in situ -doped polysil- icon layer (20 μm), deposited in an epitaxial reactor (Epipoly), is used for the upper comb fingers. The Epipoly films have been op timized and characterized for application as structural and elec trical components. The offset comb fingers are formed using a com bination of deep-reactive ion etching (DRIE), thin oxide barrier layer growth, and an isotropic dry silicon etch (XeF{sub}2) of selected areas of the Epipoly layer. The actuator has been implemented in a high fill-factor (>90%) micromirror array for optical telecommu nications applications. Large continuous scan angles (±10°) with actuation voltages <60 V have been measured with no pull-in phe nomena observed.
机译:提出了一种具有细高纵横比的梳齿和小的自对准间隙的垂直梳齿驱动致动器。执行器设计的关键是自对准,偏置梳齿驱动指状件,该指状件通过单个光刻步骤以很小的间隙(≤2μm)制成。偏置梳状指使用被薄电介质层隔开的两个厚导电层制成。下指由绝缘体上硅图标(SOI)衬底的器件层(20μm)形成,而原位掺杂的多晶硅层(20μm)沉积在外延反应器(Epipoly)中,用于上梳指。 Epipoly膜已经过优化和表征,可作为结构和电子组件使用。使用深度反应离子刻蚀(DRIE),薄氧化物阻挡层生长和Epipoly层选定区域的各向同性干硅刻蚀(XeF {sub} 2)的组合来形成偏移梳齿。该致动器已在高填充率(> 90%)微镜阵列中实现,用于光学通讯应用。在未观察到拉入现象的情况下,已测量了驱动电压<60 V的大连续扫描角度(±10°)。

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