首页> 外文期刊>Mathematics and computers in simulation >A Compact Model For The I-v Characteristics Of An Undopeddouble-gate Mosfet
【24h】

A Compact Model For The I-v Characteristics Of An Undopeddouble-gate Mosfet

机译:无掺杂双栅极Mosfet的I-v特性的紧凑模型

获取原文
获取原文并翻译 | 示例

摘要

An analytic model for the I-V characteristics of a symmetric, undoped, double gate MOSFET is presented. The model is two-dimensional and extends recent work by Chen and Taur. The formulae involve the LambertW function recently used by Ortiz-Conde to obtain threshold voltage approximations of an undoped single gate MOSFET. The drift diffusion equations are also solved numerically and our approximate solution for the Fermi potential is shown to be in close agreement with the exact numeric solution. We present a compact model for the complete I-V characteristics of an undoped double gate MOSFET.
机译:提出了一种对称的,未掺杂的双栅极MOSFET的I-V特性的解析模型。该模型是二维的,扩展了Chen和Taur最近的工作。该公式涉及Ortiz-Conde最近使用的LambertW函数,用于获得未掺杂的单栅极MOSFET的阈值电压近似值。漂移扩散方程也可以通过数值求解,我们的费米势近似解与精确数值解非常吻合。我们为无掺杂双栅极MOSFET的完整I-V特性提供了一个紧凑模型。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号