Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding

摘要

This paper is a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the Kelvin Probe method has shown an increase in the density of surface states after the diffusion welding from 2×l0~(15) cm~(-2 )to 3.5×l0~(16) cm~(-2).