Interaction of 6H-type Stacking Faults with Threading Screw Dislocations in PVT-grown 4H-SiC Single Crystals

摘要

6H-type stacking faults (SFs) observed in PVT-grown 4H-SiC single crystals were investigated using Photoluminescence (PL) microscopy at room temperature. Structural analyses using high resolution X-ray topography have revealed that there exist no <000n> (n=4, 8) component in Burger's vectors of the 6H-type SFs we observed, strongly suggesting that the 6H-type SFs are constructed either by insertions of very thin 6H-type foreign polytype inclusions or by successive repetitions of Shockley-type in-plane glides.