Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere

摘要

We report on three 3C-SiC samples grown on off oriented 6H-SiC substrate by sublimation epitaxy under different ambient conditions. Focussing on the low temperature photoluminescence and Raman measurements, we show that compared with a growth process under vacuum atmosphere, the gas atmosphere favors the incorporation of impurities at already existing and/or newly created defect sites.