机译:TaC涂层坩埚对SiC单晶生长的影响
Electronic Ceramics Center (ECC), Department of Materials & Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, Korea;
Electronic Ceramics Center (ECC), Department of Materials & Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, Korea;
Electronic Ceramics Center (ECC), Department of Materials & Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, Korea;
Electronic Ceramics Center (ECC), Department of Materials & Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, Korea;
Electronic Ceramics Center (ECC), Department of Materials & Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, Korea;
Electronic Ceramics Center (ECC), Department of Materials & Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, Korea;
Electronic Ceramics Center (ECC), Department of Materials & Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, Korea;
RIST, Pohang, Kyungbuk, Korea;
RIST, Pohang, Kyungbuk, Korea;
POSCO center, Daechidong, Gangnamgu, Seoul, Korea;
SiC; TaC-coated graphite; PVT; crystal quality;
机译:大型TaC涂层碳坩埚的制造,以低成本实现大直径块状SiC晶体的升华生长
机译:用两个坩埚的物理气相传输技术更快地生长6H-SiC单晶
机译:通过两个坩埚的物理气相传输技术更快地生长6H-SiC单晶
机译:TAC涂层坩埚对SiC单晶生长的影响
机译:通过升华法生长的块状3C-SiC单晶的研究。
机译:源材料的形态变化对4H-SiC单晶生长界面的影响
机译:在氧化镁单晶坩埚中生长的铅钛酸盐单晶的生长和表征