机译:结合表面反掺杂和NO退火提高4H-SiC MOSFET的沟道迁移率
Dept. of Physics, Auburn University, Auburn, AL, USA;
Dept. of Physics, Auburn University, Auburn, AL, USA;
Dept. of Physics, Auburn University, Auburn, AL, USA;
Dept. of Physics, Auburn University, Auburn, AL, USA;
Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ, USA;
Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ, USA;
Dept. of Physics, Auburn University, Auburn, AL, USA;
SiC MOSFET; counter doping; mobility; low temperature; CV; As; Sb; NO;
机译:通过锑反掺杂实现高沟道迁移率4H-SiC MOSFET
机译:通过高温N 2退火改善4H-SiC MOSFET中的N和P沟道迁移率
机译:通过H_2富湿重氧化提高4H-SiC C面MOSFET的沟道迁移率
机译:使用氢后氧化退火技术显着改善(1120)面上4H-SiC MOSFET的反向沟道迁移率
机译:4H-SIC沟槽MOSFET:实用的表面沟道迁移率提取
机译:GE N沟道MOSFET具有ZrO2电介质实现改进的移动性
机译:宏观阶梯表面制备的4H-siC mOsFET的高通道迁移率