Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach

摘要

A reduction of drift resistivity by an optimized epitaxial layer has been theoretically calculated using variational approach. An epitaxial growth was carried out based on the calculated design of the drift layer for a 1.7 kV SBD, with a conventional epitaxial growth for comparison, to experimentally prove a reduction of drift resistivity. An improvement of trade-off relationships for the SBD with an optimized epitaxial layer has been revealed through the investigation of their electrical characteristics.