Alternative highly homogenous drift layer doping for 650 V SiC devices

摘要

A new method for homogenous drift layer doping is introduced. Instead of in-situ doping during epitaxial growth a subsequent high energy ion implant step is used to dope the drift layer of 650V MPS (Merged-PN-Schottky) diodes. In order to avoid multiple implant steps with various energies for emulating a box-like doping profile, a novel "energy filter" membrane is used to transform the monochromatic ion beam to a beam with a continuous energy spectrum suited for box-like doping. The electrical characteristics of the diodes manufactured by this means show a very homogenous blocking behavior on wafer level, however the expected improved homogeneity in differential resistance of the wafers could not be confirmed by wafer level measurements. More work is needed to understand this discrepancy between experiment and theory.