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Bipolar transistor having a low doped drift layer of crystalline SiC

机译：具有低掺杂的SiC漂移层的双极晶体管

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摘要

A bipolar transistor having at least a low doped drift layer (14) of crystalline SiC comprises at least one first layer (13) of a semi-conductor material having a wider energy gap between the conduction band and the valence band than an adjacent layer (14) of SiC.

机译：具有至少一个低掺杂的晶体SiC漂移层（ 14 ）的双极晶体管包括至少一个具有较宽能量的半导体材料的第一层（ 13 ）导带和价带之间的间隙要比相邻的SiC层（ 14 ）大。 展开▼

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公开/公告号US6313488B1

专利类型

公开/公告日2001-11-06

原文格式PDF

申请/专利权人 ABB RESEARCH LIMITED;
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申请/专利号US19990333296

发明设计人 ULF GUSTAFSSON;MIETEK BAKOWSKI;BO BREITHOLTZ;LENNART ZDANSKY;
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申请日1999-06-15

分类号H01L297/37;H01L270/82;

国家 US

入库时间 2022-08-22 01:02:53

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