机译:预非晶超浅结中距离末端缺陷处的硼陷阱建模
LAAS/CNRS, University of Toulouse, 7 av. Col. Rochem 31077 Toulousem France STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France CEMES/CNRS, 29 rueJ. Marvig, 31055 Toulouse, France;
LAAS/CNRS, University of Toulouse, 7 av. Col. Rochem 31077 Toulousem France;
Synopsys Switzerland LLC, Affolternstrasse 52, 8050 Zuerich, Switzerland;
Synopsys Switzerland LLC, Affolternstrasse 52, 8050 Zuerich, Switzerland;
CSMA, Queens Road, Penkhull, Stoke-on-Trent, Staffordshire ST4 7LQ, UK;
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France;
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France;
STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France;
LAAS/CNRS, University of Toulouse, 7 av. Col. Rochem 31077 Toulousem France;
boron; germanium implant; end-of-range defects; SIMS; transmission electron microscopy; simulation;
机译:使用预非晶化的多层膜研究了碳在末端缺陷处的位置对硅自扩散的影响
机译:在预非晶硅中与氟或碳共注入超浅结形成的比较研究
机译:Si-和Si_xGe_(1-x)超浅结注入后和高级快速热退火中硼扩散的非高斯局部密度扩散(LDD-)模型。
机译:锗预非晶化和激光热退火超浅突变结中物种依赖性的研究
机译:改进NIS隧道结冰箱:建模,材料和陷阱。
机译:陷阱晶点缺陷的弛豫模式:NaCl中的三邻居壳模型
机译:非熔融激光退火过程中表面接近度和硼浓度对范围末端缺陷形成的影响