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Improving NIS Tunnel Junction Refrigerators: Modeling, Materials, and Traps.

机译:改进NIS隧道结冰箱:建模,材料和陷阱。

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摘要

This thesis presents a systematic study of electron cooling with Normal-metal/insulator/superconductor (NIS) tunnel junctions. NIS refrigerators have an exciting potential to simplify 100 mK and 10 mK cryogenics. Rather than using an expensive dilution refrigerator, researchers will be able to use much simpler cryogenics to reach 300 mK and supplement them with mass fabricated thin-film NIS refrigerators to reach 100 mK and below.;The mechanism enabling NIS refrigeration is energy selective tunneling. Due to the gap in the superconducting density of states, only hot electrons tunnel from the normal-metal. Power is removed from the normal-metal, that same power and the larger IV power are both deposited in the superconductor. NIS refrigerators often cool less than theory predicts because of the power deposited in the superconductor returns to the normal-metal. When the superconductor temperature is raised, or athermal phonons due to quasiparticle recombination are absorbed in the normal-metal, refrigerator performance will be reduced.;I studied the quasiparticle excitations in superconductors to develop the most complete thermal model of NIS refrigerators to date. I introduced overlayer quasiparticle traps, a new method for heatsinking the superconductor. I present measurements on NIS refrigerators with and without quasiparticle traps, to determine their effectiveness. This includes an NIS refrigerator that cools from 300 mK to 115 mK or lower, a large improvement over previous designs.;I also looked into reducing the power deposited in the superconductor, by choosing the transition temperature of the superconductor based upon the NIS refrigerator launch temperature. I performed a detailed study of the density of states of superconducting AlMn alloys, demonstrating that Mn impurities behave non-magnetically in Al due to resonant scattering. The density of states remains BCS-like, but my measurements show that the deviations from a BCS density of states harm cooling in NIS refrigerators.
机译:本文对普通金属/绝缘体/超导体(NIS)隧道结的电子冷却进行了系统的研究。 NIS冰箱具有简化100 mK和10 mK低温的令人兴奋的潜力。与其使用昂贵的稀释制冷机,研究人员将能够使用简单得多的低温制冷机来达到300 mK,并为它们提供大批量制造的薄膜NIS制冷机以达到100 mK及以下。NIS制冷的机制是能量选择性隧穿。由于状态的超导密度存在间隙,因此只有热电子从正常金属中隧穿。功率从普通金属中去除,相同的功率和较大的IV功率都沉积在超导体中。由于沉积在超导体中的功率返回到普通金属,因此NIS冰箱的冷却常常比理论上的预测要少。当超导体温度升高时,或者由于准粒子复合引起的非热声子被普通金属吸收,致冷器的性能就会降低。;我研究了超导体中的准粒子激发,以开发出迄今为止最完整的NIS致冷器热模型。我介绍了覆盖层准粒子阱,这是一种超导散热的新方法。我介绍了带或不带准粒子阱的NIS冰箱的测量结果,以确定其有效性。这包括一个从300 mK冷却到115 mK或更低的NIS冰箱,比以前的设计有很大的改进。;我还研究了如何根据NIS冰箱的启动选择超导体的转变温度来降低超导体中沉积的功率。温度。我对超导AlMn合金的状态密度进行了详细的研究,证明了由于共振散射,Mn杂质在Al中的表现为非磁性。状态密度仍然类似于BCS,但是我的测量结果表明,与BCS状态密度的偏差会损害NIS冰箱中的冷却。

著录项

  • 作者

    O'Neil, Galen Cascade.;

  • 作者单位

    University of Colorado at Boulder.;

  • 授予单位 University of Colorado at Boulder.;
  • 学科 Physics Low Temperature.;Physics Solid State.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 145 p.
  • 总页数 145
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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