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Effects of intermediate metal layer on the properties of Ga-Al doped ZnO/metal/ Ga-Al doped ZnO multilayers deposited on polymer substrate

机译:中间金属层对沉积在聚合物衬底上的Ga-Al掺杂ZnO /金属/ Ga-Al掺杂ZnO多层膜性能的影响

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摘要

Ga-Al doped ZnO/metal/Ga-Al doped ZnO multilayer films were deposited on polyethersulfone (PES) substrate at room temperature. The multilayer films consisted of intermediate Ag metal layers, top and bottom Ga-Al doped ZnO layer. The multilayer with PES substrate had advantages such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, sheet resistances of multilayer showed 9 Ω/sq with 12 nm of Ag metal layer thickness. Average optical transmittance of multilayer film showed 84% in visible range (380-770 nm) with 12 nm of Ag metal layer thickness. Moreover the multilayers showed stable mechanical properties than single-layered Ga-Al doped ZnO sample during the bending test due to the existence of ductile Ag metal layer.
机译:在室温下,将Ga-Al掺杂的ZnO /金属/ Ga-Al掺杂的ZnO多层膜沉积在聚醚砜(PES)衬底上。该多层膜由中间的Ag金属层,顶部和底部掺杂Ga-Al的ZnO层组成。具有PES衬底的多层具有诸如低薄层电阻,在可见范围内的高透光率和稳定的机械性能的优点。由结果可知,Ag金属层的厚度为12nm时,多层的薄层电阻为9Ω/ sq。 Ag金属层厚度为12 nm时,多层膜的平均透光率在可见光范围(380-770 nm)中显示为84%。此外,由于存在延展性银金属层,在弯曲试验过程中,多层膜比单层掺杂Ga-Al的ZnO样品具有稳定的机械性能。

著录项

  • 来源
    《Materials Research Bulletin》 |2012年第10期|p.2895-2897|共3页
  • 作者

    Yu Sup Jung; Kyung Hwan Kim;

  • 作者单位

    Department of Electrical Engineering, Gachon University, Seongnam 461-701, Republic of Korea;

    Department of Electrical Engineering, Gachon University, Seongnam 461-701, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A. Electronic materials; A. Multilayers; A. Thin films; B. Sputtering;

    机译:A.电子材料;A.多层;A.薄膜;溅射;

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