衬底温度对Al2O3掺杂ZnO透明导电薄膜性能的影响

摘要

Aluminum oxide-doped zinc oxide (AZO) thin films were prepared on glass substrates by radio frequency (RF) magnetron sputtering. High purity (99.9%) metallic ZnO:Al2O3 (w(ZnO)=98%, w(A12O3)=2%) ceramic target was used as source material. The morphological structure and photoelectric properties of prepared AZO films were measured by X-ray diffractometer (XRD), scanning electron micro-scope (SEM) and ultraviolet-visible (UV-Vis) spectrophotometer, the effects of substrate temperature on prepared AZO films were analyzed from the angles of film growth mode and defect scattering. The results show that the properties of the AZO thin films are remarkably influenced by the substrate temperature when the substrate temperatures are in the range of room temperature to 300 ℃. The film prepared at the substrate temperature of 200 ℃ possesses a lowest resistivity of 2.67×10-3Ω· cm and an average transmittance of over 85% in visible range.%以纯度为99.9％的陶瓷靶(w(ZnO)=98％,w(Al2O3)=2％)为溅射靶材,采用射频磁控溅射法在玻璃衬底上沉积制备了Al2O3掺杂的ZnO(AZO)薄膜.采用X射线衍射(XRD)仪、扫描电子显微镜(SEM)、紫外可见光谱(UV-Vis)仪等仪器,对AZO薄膜的形貌结构、光电学性能进行了测试,从薄膜生长方式和缺陷散射角度分析了衬底温度对AZO薄膜的影响.结果表明:当衬底温度在室温至300℃温度区间内时,其对AZO薄膜性能的影响显著.衬底温度为200℃时制得的薄膜具有良好的结晶度和光电性能,其可见光透过率为85％,电阻率为2.67×10-3Ω·cm.