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机译:p型硅(n-AZB / p-Si)异质结二极管上n型铝硼共掺杂ZnO的制备和表征
Department of Physics, University of the Free State, Bloemfontein ZA-9300, South Africa;
Department of Electronic Science, University of Delhi South Campus, New Delhi 110 021, India,Department of Electronics, Keshav Mahavidyalaya, University of Delhi 110 034, India;
Department of Electronic Science, University of Delhi South Campus, New Delhi 110 021, India;
Department of Physics, University of the Free State, Bloemfontein ZA-9300, South Africa;
Department of Physics, University of the Free State, Bloemfontein ZA-9300, South Africa;
A. Oxides; A. Thin films; B. Sol-gel chemistry; D. Electrical properties; D. Optical properties;
机译:通过溅射沉积法制备n型ZnO / p型Cu-Al-O异质结二极管
机译:n型ZnO纳米线/石墨烯/ p型硅杂化结构的制备及异质结的电学性质
机译:N-ZnO纳米线/ P-Si衬底异质结二极管的制造和温度依赖性电学特性
机译:N-ZnO的制造:Al / P-Si(100)异质结二极管及其表征
机译:由N型硅和PEDOT:PSS组成的混合异质结的制备和表征。
机译:低成本p-ZnO / n-Si整流纳米异质结二极管:制造和电特性
机译:用VHF-PECVD制备p型氢化纳米晶碳化硅/ n型晶硅异质结太阳能电池。