Formation of Al-doped ZnO films by dc magnetron reactive sputtering

摘要

Highly preferred (002) orientation transparent conductive Al-doped ZnO(ZAO) films were successfully prepared by the magnetron reactive sputtering from a Zn target mixed with Al of 2.0 wt./100. The film has a resistivity of 4.80 ×10~-4Ω cm and a visible transmittance of as high as 90/100. XPS analysis indicates Al-enrichment on the film surface. The asymmetry of Al 2p_3/2 XPS peak is resolved into two components: one centering at 72.14 eV attributed to metallic Al and the other Having a binding energy of 74.17 eV due to oxidized Al.