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Influence of hot filaments arranging on substrate temperature during HFCVD of diamond films

机译:金刚石薄膜HFCVD过程中热丝排列对基材温度的影响

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The substrate temperature distribution during hot filaments chemical vapor deposition (HFCVD) of diamond films was stimulated. Results showed that the substrate temperature varied with the space position. A temperature distribution with the periodic fluctuation that is in accordance with the filaments arranging occurred. An optimum homogeneous temperature substrate position available for the growth of diamond films over a large area existed in the space with 6-8 mm away from the filaments arranging plane The substrate temperature was influenced by filaments diameter and distance between filaments. The substrate temperature increased with the filaments diameter, but the temperature distribution was not changed. The parallel arranging of the filaments with a 10-mm distance between filaments has a lower temperature fluctuation and larger uniform temperature areas for diamond film growth. A more effective way to enlarge the growth areas of the diamond films was to increase the quantity of the arranged filaments with a proper distance between them.
机译:刺激了金刚石薄膜热丝化学气相沉积(HFCVD)过程中的基板温度分布。结果表明,衬底温度随空间位置而变化。出现具有与细丝排列相对应的周期性波动的温度分布。在距细丝排列平面6-8 mm的空间中,存在一个可用于大面积金刚石薄膜生长的最佳均匀温度衬底位置。衬底温度受细丝直径和细丝之间距离的影响。基板温度随着细丝直径的增加而增加,但是温度分布没有改变。细丝之间的距离为10mm的细丝的平行排列具有较小的温度波动和较大的均匀温度区域,以用于金刚石膜生长。增大金刚石薄膜生长区域的一种更有效的方法是增加排列的细丝的数量,并使它们之间保持适当的距离。

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