Fabrication and structure properties of GaN nanowires by ammoniating Ga_2O_3 films

摘要

The GaN nanowires were successfully synthesized on Si(111) substrates by ammoniating the Ga_2O_3/ZnO films at 900℃. The structure and morphology of the as-prepared GaN nanowires were studied by X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), scanning electron microscopy (SEM) and field-emission transmission electron microscopy (FETEM). The results show that the single-crystal GaN nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 30 nm to 120 nm, which are conducive to the application of nanodevices. Finally, the growth mechanism is also briefly discussed.