Metal organic chemical vapor deposition growth and characterization of InAs/GaSb type-II superlattices on GaAs (001) substrates

摘要

InAs/GaSb superlattices were grown on (001) GaAs substrates by metal organic chemical vapor deposition. A three-step process was introduced to grow GaSb buffer layer on GaAs substrate before the growth of the superlattice. Atomic force microscopy, X-ray diffraction and micro-Raman were used to characterize the grown structures. Generally, micro-Raman scattering from InAs/GaSb superlattices were performed over the temperature range from 77 K to 357 K. These measurements reveal that the Raman phonon frequencies decrease with increasing temperature. This temperature dependence is well described by an empirical relationship which has proved to be effective for other semiconductors. (C) 2014 Elsevier B.V. All rights reserved.