METALORGANIC CHEMICAL VAPOR DEPOSITION GROWTH OF HIGH-QUALITY InAs/GaSb TYPE II SUPERLATTICES FOR MID-IR APPLICATIONS

机译：金属化学化学气相沉积的高质量InAs / Gasb II型超晶格，用于中红外应用

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We report on the growth of InAs/GaSb Type II superlattices (SLs) on (001) GaAs and GaSb substrates by MOCVD. Through optimizing the growth parameters, morphology and structural properties of the grown structures are significantly improved.

机译：我们通过MOCVD向（001）GaAs和Gasb基材的INAS / GASB II类超晶格（SLS）的增长报告。通过优化生长参数，生长结构的形态和结构性能显着提高。

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《International Conference on Indium Phosphide and Related Materials》|2007年||共5页
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X. B. Zhang; A. Petschke; S. Mou; C. Xu; J. H. Ryou; S. L. Chuang; K. C. Hsieh; R. D. Dupuis;
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1. Metalorganic chemical vapor deposition growth of high-quality InAs/GaSb type Ⅱ superlattices on (001) GaAs substrates [J] . X. B. Zhang, J. H. Ryou, R. D. Dupuis, Applied Physics Letters . 2006,第7期

机译：（001）GaAs衬底上高质量InAs / GaSbⅡ型超晶格的金属有机化学气相沉积生长
2. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-Ⅱsuperlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors [J] . Y. Huang, J.-H. Ryou, R.D. Dupuis, Journal of Crystal Growth . 2011,第1期

机译：用于长波长红外光电探测器的金属有机化学气相沉积在GaSb衬底上InAs / GaSb和InAs / InAsSb II型超晶格的外延生长和表征
3. Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs [J] . LI Li-Gong, LIU Shu-Man, LUO Shuai, 中国物理快报：英文版 . 2012,第007期

机译：GaAs衬底上InAs / GaSb超晶格的金属有机化学气相沉积生长及P-GaSb和N-InAs的掺杂研究
4. METALORGANIC CHEMICAL VAPOR DEPOSITION GROWTH OF HIGH-QUALITY InAs/GaSb TYPE II SUPERLATTICES FOR MID-IR APPLICATIONS [C] . X. B. Zhang, A. Petschke, S. Mou, International Conference on Indium Phosphide and Related Materials . 2007

机译：金属化学化学气相沉积的高质量InAs / Gasb II型超晶格，用于中红外应用
5. Type-II InAs/GaSb superlattice LEDs: Applications for infrared scene projector systems. [D] . Norton, Dennis Thomas, Jr. 2013

机译：II型InAs / GaSb超晶格LED：红外场景投影仪系统的应用。
6. Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces [O] . Li-Gong Li, Shu-Man Liu, Shuai Luo, 2012

机译：具有可控AsxSb1-x界面的InAs / GaSb II型超晶格的金属有机化学气相沉积生长
7. Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces [O] . Li-Gong Li, Shu-Man Liu, Shuai Luo, 2012

机译：具有可控AsxSb1-x界面的InAs / GaSb II型超晶格的金属有机化学气相沉积生长
8. Growth of InAs(1-x)Sb(x)/InAs strained-layer superlattices by metal-organic chemical vapor deposition [R] . Biefeld, R. M., Baucom, K. C., Kurtz, S. R. 1993

机译：通过金属有机化学气相沉积生长Inas（1-x）sb（x）/ Inas应变层超晶格

METALORGANIC CHEMICAL VAPOR DEPOSITION GROWTH OF HIGH-QUALITY InAs/GaSb TYPE II SUPERLATTICES FOR MID-IR APPLICATIONS

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