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首页> 外文期刊>IEEE transactions on components, packaging, and manufacturing technology. Part A >The effect of underfill epoxy on warpage in flip-chip assemblies
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The effect of underfill epoxy on warpage in flip-chip assemblies

机译:底部填充环氧树脂对倒装芯片组件翘曲的影响

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The thermally-induced warpage of both a real flip-chip thermosonically bonded assembly and a simulated tri-layered assembly was investigated. It revealed the warpage of the assemblies was dominated by the forces applied by the underfill epoxy rather than the solder joints. The roles the underfill epoxy and solder joints played in causing warpage did not change even when the assembly had 196 solder joints under a 5.8 mm/spl times/5.8 mm chip. Mechanical properties of epoxy depend on the curing and the glass transition temperatures, and these characteristic temperatures clearly divide the warpage levels into two distinctive regions. When the maximum temperature the assembly was exposed to was less than the glass transition temperature (T/sub g/), the warpage of the assembly was characterized by the curing temperature. When the maximum temperature the assembly was exposed to was higher than T/sub g/, the warpage was characterized by T/sub g/ regardless of how high the temperature was. The distinctive deformation curves with sub-micron repeatability are reported for the first time. Depending upon the different characteristic temperatures of an assembly, e.g., 80/spl deg/C for curing and 130/spl deg/C for T/sub g/, the warpage and the Von Misses stress each could increase by as much as a factor of two. Such an increase could affect device reliability for RF packages and alignment for optoelectronic packages.
机译:研究了真正的倒装芯片热粘合组件和模拟的三层组件的热致翘曲。结果表明,组件的翘曲主要由底部填充环氧树脂而不是焊点施加的力所决定。即使组件在5.8 mm / spl times / 5.8 mm芯片下具有196个焊点,底部填充环氧树脂和焊点在引起翘曲中的作用也不会改变。环氧树脂的机械性能取决于固化和玻璃化转变温度,这些特征温度清楚地将翘曲度分为两个不同的区域。当组件暴露于的最高温度小于玻璃化转变温度(T / sub g /)时,组件的翘曲以固化温度为特征。当组件所承受的最高温度高于T / sub g /时,翘曲的特征在于T / sub g /而不管温度是多少。首次报道了具有亚微米重复性的独特变形曲线。取决于组件的不同特征温度,例如,固化时为80 / spl deg / C,T / sub g /时为130 / spl deg / C,翘曲和Von Misses应力各自可以增加多达一个因数两个。这种增加可能会影响RF封装的设备可靠性和光电封装的对准。

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