Chemical solution deposition of PZT/oxide electrode thin film capacitors with preferred orientation on Si substrate

摘要

This paper describes the deposition of PZT/oxide electrode thin film capacitors on Si(100) substrate with a CSD (Chemical Solution Deposition). Highly (100)&(001)-oriented SRO/LNO electrode films with a perovskite structure were obtained by the annealing at 700℃ from a precursor solution of Sr and RuCl_3·2H_2O for SRO and from a precursor solution of La(NO_3)_3 and Ni(CH_3COO)_2 for LNO. In addition, highly (100)&(001)-oriented PZT/oxide electrode capacitor were deposited on SRO/LNO/Si substrate by annealing at 650℃, showing a good ferroelectricity of P_r=22μC/cm~2 and E_c=55 kV/cm. In addition, the resultant PZT/oxide electrode thin film capacitors exhibited no fatigue up to 10~8 switching cycles.