ORGANOZIRCONIUM COMPOUND FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND RAW MATERIAL SOLUTION FOR FORMING PZT THIN FILM COMPRISING THE SAME COMPOUND

摘要

PROBLEM TO BE SOLVED: To provide an organozirconium compound for metal organic chemical vapor deposition having a lower decomposition temperature than that of a conventional Zr compound and the decomposition temperature approximating to that of a Pb compound, leaving a small amount of vaporization residues by the organozirconium compound alone, scarcely reacting with the Pb compound even when mixed therewith and resultantly leaving a small amount of vaporization residues.;SOLUTION: This organozirconium compound for the metal organic chemical vapor deposition is represented by the formula (I) in which a β-diketone group and a tertiary alkoxy group having a ketone group is bound to zirconium (wherein, R₁, R₂, R₃, R₄ and R₅ are each a 1-5C hydrocarbon group or a fluorinated hydrocarbon group; and n is an integer of 1-3).;COPYRIGHT: (C)2003,JPO