Chemical solution deposition of PZT/oxide electrode thin film capacitors with preferred orientation on Si substrate

摘要

This paper describes the deposition of PZT/oxide electrode thin film capacitors on Si(100) substrate with a CSD (Chemical Solution Deposition). Highly (100)&(001)-oriented SRO/LNO electrode films with a perovskite structure were obtained by the annealing at 700 °C from a precursor solution of Sr and RuCl{sub}3·2H{sub}2O for SRO and from a precursor solution of La(NO{sub}3){sub}3 and Ni(CH{sub}3COO){sub}2 for LNO. In addition, highly (100)&(001)-oriented PZT/oxide electrode capacitor were deposited on SRO/LNO/Si substrate by annealing at 650 °C, showing a good ferroelectricity of P{sub}r=22μC/cm{sup}2 and E{sub}c=55 kV/cm. In addition, the resultant PZT/oxide electrode thin film capacitors exhibited no fatigue up to 10{sup}8 switching cycles.