lon-bombardment effects on PtSi-Si Schottky contacts studied by ballistic electron emission microscopy

摘要

Ballistic electron emission-microscopy has been used to study physical damage effects on PtSi-Si Schottky contacts. The physical damages are introduced into Si substrates by ion bombardment with Well-defined energies in an ion-milling process. Cchottky barrier height (SBH) distribution is Measured on the subsequently formed ptSi-Si Schottky diodes. The results show that mean SBH Decreases with ion energy in a square-root relation.